NSBC114EPDXV6T5G

NSBC114EPDXV6T5G

  • Description:TRANS PREBIAS NPN/PNP 50V SOT563
  • Series:-

SKU:a06cf306db3e Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN/PNP 50V SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSBC114EPDXV6T5G

Overview

The NSBC114EPDXV6T5G is a dual pre-biased bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-563 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal bias resistors are typically set at 10 kOhms for both base and emitter connections. The unit offers a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, with a maximum power dissipation of 500 mW. It operates reliably across a temperature range from -55 °C to +150 °C.

Feature Summary

  • Integrates complementary NPN and PNP transistors in a compact SOT-563 package
  • Includes built-in bias resistors to simplify circuit design and reduce component count
  • Provides high DC current gain for efficient signal switching applications

Applications

  • General-purpose switching circuits requiring complementary logic levels
  • Interface drivers for microcontrollers and digital logic families
  • Low-power amplifier stages in portable electronic devices

Procurement Notes

Verify the specific suffix T5G against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the part number with authorized distributors to confirm current production status and availability constraints before finalizing procurement plans.

Selection Notes

Select this component when a matched NPN/PNP pair with integrated biasing is required in a small footprint. The 50 V rating suits low-voltage digital systems. Verify that the 100 mA current limit meets load requirements. Consider thermal management for the SOT-563 package given the 500 mW power dissipation limit in enclosed environments.

Part Context

This part belongs to the NSBC114 series of dual pre-biased transistors from onsemi. It serves as a compact solution for replacing discrete resistor-transistor networks. The SOT-563 package allows for automated surface-mount assembly, supporting high-volume manufacturing efficiency in consumer and industrial electronics.

Replacement Considerations

Direct substitutes include NSBC114EPDXV6T1G and NSBC114YDXV6T1G. Verify pinout compatibility and electrical parameter tolerances before substitution. Alternative packages may require schematic redesign.

NSBC114EPDXV6T5GNSBC114EPDXV6T5G

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