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The NSBC114EPDXV6T5G is a dual pre-biased bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-563 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal bias resistors are typically set at 10 kOhms for both base and emitter connections. The unit offers a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, with a maximum power dissipation of 500 mW. It operates reliably across a temperature range from -55 °C to +150 °C.
Verify the specific suffix T5G against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the part number with authorized distributors to confirm current production status and availability constraints before finalizing procurement plans.
Select this component when a matched NPN/PNP pair with integrated biasing is required in a small footprint. The 50 V rating suits low-voltage digital systems. Verify that the 100 mA current limit meets load requirements. Consider thermal management for the SOT-563 package given the 500 mW power dissipation limit in enclosed environments.
This part belongs to the NSBC114 series of dual pre-biased transistors from onsemi. It serves as a compact solution for replacing discrete resistor-transistor networks. The SOT-563 package allows for automated surface-mount assembly, supporting high-volume manufacturing efficiency in consumer and industrial electronics.
Direct substitutes include NSBC114EPDXV6T1G and NSBC114YDXV6T1G. Verify pinout compatibility and electrical parameter tolerances before substitution. Alternative packages may require schematic redesign.