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The NSBC114TDP6T5G is a dual NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates two NPN transistors with built-in bias resistors into a single SOT-963 package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 339 mW. The device features a minimum DC current gain (hFE) of 80 at 5 mA and 10 V. Internal resistances are typically 10 kΩ for the base resistor (R1) and 47 kΩ for the emitter resistor (R2). It operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix DP6 against official datasheets to confirm the SOT-963 package type and pinout configuration. Ensure compliance with RoHS directives and check for automotive qualification prefixes if required for the target application environment.
Select this component when space constraints require integrating both transistor and bias resistors. Verify that the 50 V rating and 100 mA current capacity meet the load requirements. Confirm thermal management capabilities for the 339 mW power dissipation limit in the intended operating environment.
This part belongs to the NSBC114 series of complementary bipolar digital transistors. These devices are designed to simplify biasing networks in digital logic and switching applications. The series offers various configurations including NPN, PNP, and complementary pairs in compact surface-mount packages.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical specifications before considering alternative manufacturers or generic equivalents.