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The NSBC114TDXV6 is a dual NPN digital transistor array manufactured by onsemi, housed in an SOT-563 surface-mount package. It integrates two NPN transistors with monolithic biasing networks, each featuring a typical input resistance of 10 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 357 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the complete part number including suffixes such as T1G for RoHS compliance and packaging specifications. Confirm that the SOT-563 footprint matches the target PCB layout. Ensure thermal management requirements align with the 357 mW power dissipation rating under expected ambient conditions. Cross-reference datasheet electrical characteristics against specific application constraints before finalizing procurement.
Select this component when a compact solution for dual NPN switching is required without external biasing resistors. The integrated 10 kOhm input resistance simplifies drive requirements for standard logic families. Consider the SOT-563 package size for space-constrained designs. Verify that the 50 V voltage rating and 100 mA current capacity exceed the maximum operational loads in the target circuit to ensure reliable performance.
This device belongs to the NSBC series of pre-biased bipolar transistor arrays from onsemi. These components are engineered to reduce board space and assembly costs by combining transistors and resistors into single packages. The NSBC114TDXV6 specifically addresses applications requiring dual NPN configurations with standardized biasing parameters.
Compatible substitutes include NSBC114YPDXV6T1G for complementary NPN/PNP needs or NSBA114YDXV6T1G for dual PNP configurations. Direct replacements must maintain the SOT-563 package and similar electrical ratings.