NSBC114TDXV6

NSBC114TDXV6

$0.04
  • Description:TRANS 2NPN PREBIAS 0.5W SOT563
  • Series:-

SKU:576ba2de293d Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.5W SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSBC114TDXV6

Overview

The NSBC114TDXV6 is a dual NPN digital transistor array manufactured by onsemi, housed in an SOT-563 surface-mount package. It integrates two NPN transistors with monolithic biasing networks, each featuring a typical input resistance of 10 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 357 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with built-in biasing resistors for simplified circuit design
  • Provides high DC current gain with a minimum hFE of 160
  • Designed for direct replacement of discrete transistor and resistor networks

Applications

  • General-purpose switching applications
  • Driver circuits for logic interfaces
  • Biasing networks in low-power analog stages

Procurement Notes

Verify the complete part number including suffixes such as T1G for RoHS compliance and packaging specifications. Confirm that the SOT-563 footprint matches the target PCB layout. Ensure thermal management requirements align with the 357 mW power dissipation rating under expected ambient conditions. Cross-reference datasheet electrical characteristics against specific application constraints before finalizing procurement.

Selection Notes

Select this component when a compact solution for dual NPN switching is required without external biasing resistors. The integrated 10 kOhm input resistance simplifies drive requirements for standard logic families. Consider the SOT-563 package size for space-constrained designs. Verify that the 50 V voltage rating and 100 mA current capacity exceed the maximum operational loads in the target circuit to ensure reliable performance.

Part Context

This device belongs to the NSBC series of pre-biased bipolar transistor arrays from onsemi. These components are engineered to reduce board space and assembly costs by combining transistors and resistors into single packages. The NSBC114TDXV6 specifically addresses applications requiring dual NPN configurations with standardized biasing parameters.

Replacement Considerations

Compatible substitutes include NSBC114YPDXV6T1G for complementary NPN/PNP needs or NSBA114YDXV6T1G for dual PNP configurations. Direct replacements must maintain the SOT-563 package and similar electrical ratings.

NSBC114TDXV6NSBC114TDXV6
$0.04
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