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The NSBC114TDXV6T1 is a dual NPN digital transistor from onsemi, housed in an SOT-563 package. It integrates two monolithic bias resistor transistors (BRTs) with specific internal resistance configurations: R1 is 10 kΩ and R2 is infinite (open circuit). Key electrical ratings include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device power dissipation of 357 mW at 25°C. The DC current gain (hFE) has a minimum value of 160. Operating temperatures range from -55°C to +150°C.
Verify the exact ordering suffix against the manufacturer's current documentation to ensure correct resistor values and packaging specifications. Confirm RoHS compliance status and availability through authorized distributors, as product lifecycles may change. Cross-reference the datasheet revision date to validate all electrical parameters before finalizing procurement orders.
Select this component when a dual NPN configuration with a 10 kΩ series base resistor and no base-emitter shunt resistor is required. Ensure the application voltage does not exceed the 50 Vdc rating and current requirements remain within the 100 mA limit. Verify that the SOT-563 package dimensions fit the available PCB real estate constraints.
This part belongs to the NSBC1xxxDXV6T1 series of dual bias resistor transistors. It shares the same SOT-563 physical footprint and general electrical characteristics with other variants in the family, differing primarily in the internal resistor network values (R1 and R2) defined by the middle digits of the part number.
Direct substitutes within the same series include NSBC114EDXV6T1 or NSBC114YDXV6T1 if different resistor ratios are acceptable. Verify pinout compatibility and thermal resistance characteristics when considering alternative packages or manufacturers.