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The NSBC114TDXV6T1G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device includes integrated base resistors with a typical value of 10 kOhms. Power dissipation is rated at 357 mW. The component operates within a temperature range of -55 °C to +150 °C and provides a minimum DC collector/base gain (hFE) of 160.
Verify the specific ordering suffix and package variant against official onsemi documentation to ensure compatibility with your design requirements. Confirm that the SOT-563-6 footprint matches your PCB layout constraints. Check for any recent product change notifications or environmental compliance updates prior to finalizing procurement plans.
Select this component when a dual NPN configuration with integrated base resistance is required. Ensure the 50 V voltage rating and 100 mA current capacity meet the load specifications. Consider the thermal management capabilities given the 357 mW power dissipation limit in the SOT-563 package for your specific application environment.
This part belongs to the NSBC series of bipolar pre-biased transistors from onsemi. These components are designed to replace discrete resistor-transistor networks, reducing board space and assembly complexity. The series offers various configurations and resistance values to suit different logic interface needs.
Compatible substitutes include other dual NPN digital transistors in SOT-563 packages with similar electrical characteristics, such as those from Rohm or Diodes Inc., provided they match the 50 V, 100 mA, and 10 kOhm base resistor specifications.