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The NSBC114TDXV6T5 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two NPN silicon transistors with monolithic bias resistor networks housed in an SOT-563 package. It integrates a series base resistor and an open base-emitter path per transistor. Key electrical parameters include a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a DC current gain minimum of 160 at 5 mA and 10 V. The device incorporates a 10 kOhm input resistor and operates within a junction temperature range of -55 to +150 °C.
Verify the specific suffix configuration against official documentation to ensure correct resistor values and lead-free status. Confirm that the ordering code matches the required tape and reel specifications for automated assembly processes. Cross-reference the manufacturer's latest datasheet revision to validate all electrical characteristics prior to final procurement decisions.
Select this component when a dual NPN digital transistor with a 10 kOhm base resistor and no emitter resistor is required. Ensure the application voltage does not exceed the 50 Vdc collector-emitter rating. Verify that the thermal dissipation requirements fit within the specified limits for the SOT-563 package under expected ambient conditions.
This part belongs to the NSBC114EDXV6 series of preferred dual BRT devices. It shares the SOT-563 physical form factor with variants like NSBC114YDXV6T1 but differs in internal resistor topology. The 'T5' suffix indicates a standard tape and reel quantity of 8000 units for manufacturing integration.
NSBC114YDXV6T1G offers a similar package but includes a 47 kOhm emitter resistor instead of an open circuit.