NSBC114TDXV6T5

NSBC114TDXV6T5

$0.04
  • Description:TRANS 2NPN PREBIAS 0.5W SOT563
  • Series:-

SKU:7c75603194f4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.5W SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSBC114TDXV6T5

Overview

The NSBC114TDXV6T5 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two NPN silicon transistors with monolithic bias resistor networks housed in an SOT-563 package. It integrates a series base resistor and an open base-emitter path per transistor. Key electrical parameters include a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a DC current gain minimum of 160 at 5 mA and 10 V. The device incorporates a 10 kOhm input resistor and operates within a junction temperature range of -55 to +150 °C.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors into a single surface-mount component
  • Eliminates the need for external discrete biasing components to simplify circuit design
  • Provides a compact footprint suitable for applications where board space is limited

Applications

  • Low power surface mount applications requiring space efficiency
  • Digital switching circuits utilizing integrated bias networks
  • General-purpose transistor arrays replacing multiple discrete components

Procurement Notes

Verify the specific suffix configuration against official documentation to ensure correct resistor values and lead-free status. Confirm that the ordering code matches the required tape and reel specifications for automated assembly processes. Cross-reference the manufacturer's latest datasheet revision to validate all electrical characteristics prior to final procurement decisions.

Selection Notes

Select this component when a dual NPN digital transistor with a 10 kOhm base resistor and no emitter resistor is required. Ensure the application voltage does not exceed the 50 Vdc collector-emitter rating. Verify that the thermal dissipation requirements fit within the specified limits for the SOT-563 package under expected ambient conditions.

Part Context

This part belongs to the NSBC114EDXV6 series of preferred dual BRT devices. It shares the SOT-563 physical form factor with variants like NSBC114YDXV6T1 but differs in internal resistor topology. The 'T5' suffix indicates a standard tape and reel quantity of 8000 units for manufacturing integration.

Replacement Considerations

NSBC114YDXV6T1G offers a similar package but includes a 47 kOhm emitter resistor instead of an open circuit.

NSBC114TDXV6T5NSBC114TDXV6T5
$0.04
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