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The NSBC114TDXV6T5G is a dual pre-biased NPN transistor array manufactured by onsemi. It integrates two NPN bipolar junction transistors with built-in base resistors within a compact SOT-563 surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, and a maximum collector cutoff current of 500 nA. The unit operates up to a maximum junction temperature of 150 °C and dissipates up to 500 mW of power.
Verify the specific suffix configuration against official datasheets to ensure correct pinout and resistor values. Confirm RoHS compliance status and moisture sensitivity level requirements prior to assembly. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability.
Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Consider the SOT-563 package dimensions for PCB layout constraints and thermal dissipation needs relative to the 500 mW power limit.
This part belongs to the NSBC114 series of pre-biased transistor arrays from onsemi. These devices are designed to replace discrete resistor-transistor combinations, offering a compact solution for driving loads or interfacing logic levels. The series typically includes variants with different resistor values and transistor configurations to suit various application needs.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative pre-biased dual NPN arrays by matching pinouts, voltage ratings, and current gains.