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The NSBC114TPDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates one NPN and one PNP transistor with monolithic bias networks. The device features a series base resistor of 10 kΩ and lacks a base-emitter resistor. Maximum ratings include a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Thermal characteristics specify a total device dissipation of 500 mW when both junctions are heated at 25°C ambient temperature.
Verify the specific ordering suffix and revision level against the manufacturer's latest documentation before procurement. Confirm that the component meets all required environmental compliance standards for the intended application. Ensure compatibility with existing assembly processes and soldering profiles specified in the datasheet.
Select this component when a complementary pair of pre-biased transistors is required in a single package. The 10 kΩ input resistance suits standard logic interface levels. Verify thermal requirements against the 500 mW dissipation limit under operating conditions. Consider the SOT-563 footprint constraints during PCB layout.
This part belongs to the NSBC114EPDXV6T1 series of dual Bias Resistor Transistors. It shares the same physical package and general electrical characteristics as other variants in the series, distinguished primarily by its internal resistor network configuration. The series is designed to offer a compact alternative to discrete transistor and resistor combinations.
Direct substitutes within the same series include NSBC114EPDXV6T1 and NSBC114YPDXV6T1, though resistor values differ. Verify pinout compatibility and electrical parameters before substitution. Consult the manufacturer's replacement guide for approved alternatives.