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The NSBC114TPDXV6T1G is a complementary digital transistor from onsemi, featuring dual NPN and PNP transistors in an SOT-563-6 surface-mount package. It provides a continuous collector current of 100 mA and a maximum collector-emitter voltage (VCEO) of 50 V for both polarities. The device integrates typical input resistors of 10 kOhms with a typical resistor ratio of 0.21. Power dissipation is rated at 357 mW, operating within a temperature range of -55°C to +150°C.
Verify the specific suffix 'T' against official documentation to confirm the exact internal configuration and electrical characteristics, as ordering suffixes may denote variations in packaging or specific parameter tolerances. Ensure the selected variant matches the required circuit design specifications before procurement.
Select this component when space constraints require integrating both NPN and PNP switching functions. The 10 kOhm input resistance suits standard logic drive levels. Consider the 357 mW power dissipation limit and thermal management requirements for the SOT-563-6 package during board layout.
This part belongs to the NSBC series of complementary digital transistors by onsemi. These devices are engineered to simplify circuit design by combining two transistors and their associated biasing resistors into one small-footprint package, reducing component count and assembly time compared to discrete solutions.
NSBC114YPDXV6T1G
The typical input resistance is 10 kOhms.
Yes, it is a complementary digital transistor containing both NPN and PNP elements.