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The NSBC114YDXV6T1 is a dual NPN digital transistor from onsemi, housed in an SOT-563 package. It integrates two monolithic bias resistor networks, each comprising a series base resistor (R1) and a base-emitter resistor (R2). Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 357 mW at 25°C. The internal resistors are specified as R1 = 10 kΩ and R2 = 47 kΩ, yielding a typical ratio of 0.21. The DC current gain (hFE) has a minimum value of 80.
Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Confirm that the component meets required environmental standards and lead-free plating requirements before integration into production schedules.
Select this component when a dual NPN configuration with asymmetric bias resistors is required. The 10 kΩ series resistor and 47 kΩ base-emitter resistor provide specific input impedance characteristics suitable for defined logic levels. Ensure the 50 V voltage rating and 100 mA current capacity align with the target circuit demands.
This device belongs to the NSBC114EDXV6 series of preferred dual bias resistor transistors. It shares the same SOT-563 package and general electrical ratings as other variants in the family, distinguished primarily by its unique internal resistor values and marking code '7D'.
Direct substitutes within the same series include NSBC114EDXV6T1, which features equal 10 kΩ resistors. Other variants like NSBC124EDXV6T1 or NSBC144EDXV6T1 offer different resistance ratios but share identical package and voltage/current ratings.