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The NSBC114YDXV6T1G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two NPN transistors with monolithic bias resistor networks, featuring a typical series base resistor of 10 kOhms and a base-emitter resistor ratio of 0.21. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 357 mW, with a minimum DC current gain (hfe) of 80. Operating temperatures range from -55°C to +150°C.
Verify the manufacturer designation carefully, as the part number prefix indicates onsemi rather than Fairchild Semiconductor. Confirm RoHS compliance status directly from the official datasheet, as historical records may vary. Ensure the ordering suffix matches the required packaging format, such as cut tape or reel, to align with assembly requirements.
Select this component when a dual NPN configuration with integrated biasing is required. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific circuit demands. Consider the SOT-563-6 package dimensions for PCB layout constraints and ensure thermal management supports the 357 mW power dissipation rating under operating conditions.
This component belongs to the NSB series of Bias Resistor Transistors (BRTs). These devices are designed to simplify circuit design by integrating resistors directly with the transistor die. The series offers various configurations and resistance values to accommodate different logic levels and drive requirements while maintaining a small footprint.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other dual NPN BRTs in the SOT-563 package only if electrical parameters match exactly. Verify pinout compatibility before substitution.