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The NSBC114YDXV6T5G is a dual digital transistor from onsemi, featuring one NPN and one PNP transistor in a single SOT-563-6 package. It integrates monolithic bias resistor networks to replace discrete components. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V for both transistors and a continuous collector current of 100 mA. The device operates within a temperature range of -55°C to +150°C with a power dissipation of 357 mW.
Verify the exact suffix 'T5G' against official onsemi documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with SOT-563 footprint requirements during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before procurement.
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. The 50V rating suits low-voltage digital logic interfaces. Verify that the 100mA current limit meets load requirements. Consider the SOT-563 package constraints for thermal management in dense layouts.
This part belongs to onsemi's NSB series of Bias Resistor Transistors (BRTs). These devices are designed to simplify circuit design by combining transistors and resistors. The NSBC variant specifically denotes a complementary NPN/PNP configuration, distinct from single-polarity variants like the NSBA or NSBN series.
Direct substitutes may include NSBC114YPDXV6T1G or NSBC114EPDXV6T1G, provided pinout and electrical ratings match. Verify equivalent hFE and resistor values. Cross-reference with other manufacturers' complementary BRTs in SOT-563 packages if supply chain constraints exist.