NSBC114YPDXV6T1

NSBC114YPDXV6T1

$0.37
  • Description:TRANS PREBIAS NPN/PNP SOT563
  • Series:-

SKU:44b111bf1e34 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN/PNP SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

Download product information

NSBC114YPDXV6T1

Overview

The NSBC114YPDXV6T1 is a complementary dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP transistor with monolithic bias networks in an SOT-563 package. It features a typical input resistor R1 of 10 kOhms and R2 of 47 kOhms, yielding a ratio of 0.21. The device supports a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Thermal dissipation is rated at 357 mW for one junction and 500 mW for both junctions heated. DC current gain (hFE) ranges from 80 to 140. Operating temperature spans -55°C to +150°C.

Feature Summary

  • Integrates two complementary transistors with built-in bias resistors to replace discrete components
  • Reduces board space and simplifies circuit design by eliminating external resistor networks
  • Available in lead-free packages compliant with RoHS standards

Applications

  • Low power surface mount applications where board space is limited
  • General purpose switching circuits requiring integrated biasing
  • Digital logic interface circuits

Procurement Notes

Verify the specific ordering suffix 'T1' corresponds to the 4 mm pitch tape and reel packaging containing 4000 units per reel. Confirm that the component meets Pb-Free requirements if necessary for the assembly process. Ensure the SOT-563 footprint matches the design layout before finalizing procurement orders.

Selection Notes

Select this component when a complementary pair of digital transistors with a 10 kOhm series base resistor and 47 kOhm base-emitter resistor is required. The 50 V rating and 100 mA current capacity suit low-power switching tasks. Verify thermal constraints against the 357 mW single-junction dissipation limit during operation.

Part Context

This part belongs to the NSBC114EPDXV6 series family of dual Bias Resistor Transistors. While similar to the NSBC114EPDXV6T1 which uses equal 10 kOhm resistors, the YP variant specifically integrates a 10 kOhm and 47 kOhm resistor combination. It shares the same SOT-563 package and general electrical characteristics as other members of the EPDXV6 series.

Replacement Considerations

Direct replacement options include the NSBC114EPDXV6T1G, though it utilizes different internal resistor values (10 kOhm/10 kOhm). Designers must verify that the change in resistor ratio does not affect the biasing conditions of the target circuit before substituting.

NSBC114YPDXV6T1NSBC114YPDXV6T1
$0.37
Buy Now