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The NSBC114YPDXV6T1 is a complementary dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP transistor with monolithic bias networks in an SOT-563 package. It features a typical input resistor R1 of 10 kOhms and R2 of 47 kOhms, yielding a ratio of 0.21. The device supports a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Thermal dissipation is rated at 357 mW for one junction and 500 mW for both junctions heated. DC current gain (hFE) ranges from 80 to 140. Operating temperature spans -55°C to +150°C.
Verify the specific ordering suffix 'T1' corresponds to the 4 mm pitch tape and reel packaging containing 4000 units per reel. Confirm that the component meets Pb-Free requirements if necessary for the assembly process. Ensure the SOT-563 footprint matches the design layout before finalizing procurement orders.
Select this component when a complementary pair of digital transistors with a 10 kOhm series base resistor and 47 kOhm base-emitter resistor is required. The 50 V rating and 100 mA current capacity suit low-power switching tasks. Verify thermal constraints against the 357 mW single-junction dissipation limit during operation.
This part belongs to the NSBC114EPDXV6 series family of dual Bias Resistor Transistors. While similar to the NSBC114EPDXV6T1 which uses equal 10 kOhm resistors, the YP variant specifically integrates a 10 kOhm and 47 kOhm resistor combination. It shares the same SOT-563 package and general electrical characteristics as other members of the EPDXV6 series.
Direct replacement options include the NSBC114EPDXV6T1G, though it utilizes different internal resistor values (10 kOhm/10 kOhm). Designers must verify that the change in resistor ratio does not affect the biasing conditions of the target circuit before substituting.