NSBC114YPDXV6T1G

NSBC114YPDXV6T1G

$0.30
  • Description:TRANS PREBIAS NPN/PNP 50V SOT563
  • Series:-

SKU:76545a6a6195 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN/PNP 50V SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

Download product information

NSBC114YPDXV6T1G

Overview

The NSBC114YPDXV6T1G is a dual digital transistor from onsemi, configured as a complementary pair of NPN and PNP transistors in a SOT-563-6 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA for both polarities. The device integrates monolithic bias resistors with typical values of 10 kOhms, resulting in a typical resistor ratio of 0.21. Minimum DC current gain (hfe) is specified at 80 for the NPN and 140 for the PNP element. Power dissipation is rated at 357 mW, with an operating temperature range spanning from -55 °C to +150 °C.

Feature Summary

  • Complementary dual configuration integrating one NPN and one PNP pre-biased transistor within a single compact SOT-563-6 package.
  • Monolithic bias network eliminates external discrete resistors, reducing component count and printed circuit board area.
  • High thermal stability supports operation up to a maximum junction temperature of +150 °C.

Applications

  • General-purpose switching applications requiring complementary logic levels
  • Driver circuits for low-power loads in consumer electronics
  • Interface buffering between microcontrollers and peripheral devices

Procurement Notes

Verify the complete part number including the suffix T1G to ensure compliance with RoHS directives and lead-free manufacturing standards. Confirm the specific revision level against the manufacturer's latest datasheet to guarantee pinout compatibility and electrical parameter consistency during procurement.

Selection Notes

Select this component when a matched NPN/PNP pair is required for push-pull or differential signaling configurations. Ensure the 50 V voltage rating and 100 mA current capacity align with the target load requirements. Verify that the integrated 10 kOhm base resistance provides appropriate drive characteristics for the controlling logic source.

Part Context

This device belongs to the NSBC114YPDXV6 series of Bias Resistor Transistors (BRTs). It serves as a surface-mount alternative to discrete transistor-resistor networks, offering space savings in dense PCB layouts. The complementary nature distinguishes it from single-polarity BRTs like the NSBA114YDXV6T1G.

Replacement Considerations

NSBC114EPDXV6T1G is a confirmed direct substitute within the same product family. Verify pinout alignment and electrical specifications before substitution. Other manufacturers' complementary BRTs in SOT-563 packages may require schematic review for resistor value matching.

NSBC114YPDXV6T1GNSBC114YPDXV6T1G
$0.30
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