SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSBC114YPDXV6T1G is a dual digital transistor from onsemi, configured as a complementary pair of NPN and PNP transistors in a SOT-563-6 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA for both polarities. The device integrates monolithic bias resistors with typical values of 10 kOhms, resulting in a typical resistor ratio of 0.21. Minimum DC current gain (hfe) is specified at 80 for the NPN and 140 for the PNP element. Power dissipation is rated at 357 mW, with an operating temperature range spanning from -55 °C to +150 °C.
Verify the complete part number including the suffix T1G to ensure compliance with RoHS directives and lead-free manufacturing standards. Confirm the specific revision level against the manufacturer's latest datasheet to guarantee pinout compatibility and electrical parameter consistency during procurement.
Select this component when a matched NPN/PNP pair is required for push-pull or differential signaling configurations. Ensure the 50 V voltage rating and 100 mA current capacity align with the target load requirements. Verify that the integrated 10 kOhm base resistance provides appropriate drive characteristics for the controlling logic source.
This device belongs to the NSBC114YPDXV6 series of Bias Resistor Transistors (BRTs). It serves as a surface-mount alternative to discrete transistor-resistor networks, offering space savings in dense PCB layouts. The complementary nature distinguishes it from single-polarity BRTs like the NSBA114YDXV6T1G.
NSBC114EPDXV6T1G is a confirmed direct substitute within the same product family. Verify pinout alignment and electrical specifications before substitution. Other manufacturers' complementary BRTs in SOT-563 packages may require schematic review for resistor value matching.