NSBC114YPDXV6T5

Overview

The NSBC114YPDXV6T5 is a complementary dual digital transistor manufactured by onsemi, integrating one NPN and one PNP Bias Resistor Transistor (BRT) into a single SOT-563-6 package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA for both polarities. The device includes built-in bias resistors with typical values of R1 = 10 kΩ and R2 = 47 kΩ, resulting in a resistor ratio of approximately 0.21. Minimum DC current gain (hFE) is specified at 80 for the NPN element and 140 for the PNP element. Power dissipation is rated at 357 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors with monolithic bias networks to reduce component count and board space.
• Eliminates external biasing components by combining transistors with series base and base-emitter resistors.
• Designed for simplified circuit design in applications requiring small-signal switching.

Applications

• General-purpose small-signal switching circuits
• Logic level translation interfaces
• Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix 'T5' against official manufacturer documentation, as standard commercial variants often utilize 'T1G'. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability may vary based on production cycles and regional stock levels.

Selection Notes

Select this component when a complementary pair of pre-biased transistors is required in a compact surface-mount footprint. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Verify that the integrated resistor values align with the target logic interface voltages and drive currents.

Part Context

This part belongs to the NSBC114Y series of complementary bipolar digital transistors. It shares the same functional architecture as other members like NSBC114YPDXV6T1G but may differ in packaging configuration or manufacturing site designation indicated by the suffix. It serves as a direct replacement for discrete resistor-transistor combinations in space-constrained designs.

Replacement Considerations

Direct substitutes include NSBC114YPDXV6T1G and NSBC114YPDP6T5G. Cross-brand alternatives such as those from Nexperia or Diodes Incorporated should be evaluated for pin compatibility and electrical parameter equivalence.