NSBC114YPDXV6T5G

NSBC114YPDXV6T5G

$0.05
  • Description:TRANS PREBIAS NPN/PNP 50V SOT563
  • Series:-

SKU:baaba542e67a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN/PNP 50V SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSBC114YPDXV6T5G

Overview

The NSBC114YPDXV6T5G is a dual NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates two NPN transistors with monolithic bias resistor networks into a single surface-mount device, designed to replace discrete transistor and resistor combinations. The component features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistances include a base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 47 kΩ. It operates within a temperature range up to 150 °C and is housed in the SOT-963 package.

Feature Summary

  • Integrates dual NPN transistors with built-in bias resistors to reduce board space and system cost
  • Eliminates external discrete components for simplified circuit design
  • Provides high DC current gain for efficient switching applications

Applications

  • General-purpose digital switching circuits
  • Interface level shifting between logic families
  • Driver stages for low-power loads

Procurement Notes

Verify the specific suffix configuration against official datasheets to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the ordering part number matches the exact package variant required for the PCB layout.

Selection Notes

Select this component when space constraints prevent the use of discrete transistors and separate biasing resistors. Verify that the integrated resistance values align with the target logic levels and drive requirements. Consider the thermal dissipation capabilities of the SOT-963 package relative to the expected power load in the application.

Part Context

This part belongs to the NSBC114 series of digital transistors from onsemi. The series is engineered to simplify bias network designs by combining active and passive elements. It serves as a compact alternative to traditional discrete BJT configurations in consumer and industrial electronics.

Replacement Considerations

Compatible substitutes include other dual NPN BRTs with similar voltage and current ratings, such as the NSBA114YDP6T5G or MUN5214DW1, provided pin compatibility and internal resistance values are verified.

NSBC114YPDXV6T5GNSBC114YPDXV6T5G
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