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The NSBC114YPDXV6T5G is a dual NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates two NPN transistors with monolithic bias resistor networks into a single surface-mount device, designed to replace discrete transistor and resistor combinations. The component features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistances include a base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 47 kΩ. It operates within a temperature range up to 150 °C and is housed in the SOT-963 package.
Verify the specific suffix configuration against official datasheets to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure the ordering part number matches the exact package variant required for the PCB layout.
Select this component when space constraints prevent the use of discrete transistors and separate biasing resistors. Verify that the integrated resistance values align with the target logic levels and drive requirements. Consider the thermal dissipation capabilities of the SOT-963 package relative to the expected power load in the application.
This part belongs to the NSBC114 series of digital transistors from onsemi. The series is engineered to simplify bias network designs by combining active and passive elements. It serves as a compact alternative to traditional discrete BJT configurations in consumer and industrial electronics.
Compatible substitutes include other dual NPN BRTs with similar voltage and current ratings, such as the NSBA114YDP6T5G or MUN5214DW1, provided pin compatibility and internal resistance values are verified.