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Product Detailed Parameters
- Description：TRANS PREBIAS 2NPN 50V SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：100kOhms
- Resistor - Emitter Base (R2)：100kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The NSBC115EDXV6T1G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It features a typical input resistance of 100 kOhms with a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 357 mW, with a minimum DC current gain (hfe) of 80. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual NPN configuration integrated with internal biasing resistors for simplified circuit design
- High thermal stability supporting operation up to +150°C junction temperature
- Compact SOT-563-6 packaging optimized for space-constrained surface-mount applications
Applications
- General-purpose switching circuits requiring dual NPN logic interfaces
- Low-voltage signal processing stages within consumer electronics
- Interface drivers for microcontroller output expansion
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status via official documentation prior to integration. Ensure storage conditions align with moisture sensitivity level requirements to maintain device reliability during assembly processes.
Selection Notes
Select this component when dual NPN switching with high input impedance is required. The 100 kOhm input resistance suits low-drive applications. Verify that the 50 V voltage rating and 100 mA current capacity meet specific circuit demands. Consider the SOT-563-6 footprint constraints against available board space.
Part Context
This part belongs to the NSBC115EDXV6 series of digital transistors. It shares the SOT-563-6 package form factor with other variants in the family but differs in internal resistor values and transistor configurations. It serves as a discrete solution for replacing multiple external components in switching applications.
Replacement Considerations
Cross-reference with NSBC113EDXV6T1G for similar dual NPN specifications, noting differences in input resistance and gain characteristics. Verify pinout compatibility and electrical parameter alignment before substitution.
