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The NSBC115EPDXV6T1G is a dual digital transistor from onsemi, featuring one NPN and one PNP bipolar junction transistor within a single SOT-563-6 surface-mount package. It integrates built-in bias resistors with a typical value of 100 kOhms and a ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. With a power dissipation rating of 500 mW and a minimum DC current gain (hFE) of 80, it operates across a temperature range of -55°C to +150°C.
Verify the complete part number including the suffix T1G to ensure compliance with RoHS directives and lead-free manufacturing standards. Confirm the specific revision level against the official datasheet to guarantee pinout compatibility and electrical parameter consistency during procurement.
Select this component when a matched NPN/PNP pair with high input impedance is required. The 100 kOhm internal resistor suits low-drive current applications. Ensure the SOT-563-6 package fits the PCB layout constraints and that the 500 mW power dissipation meets the thermal requirements of the target environment.
This device belongs to the NSBC115EPDXV6 series of pre-biased digital transistors. It serves as a solid-state alternative to discrete resistor-transistor networks, offering improved space efficiency and consistent electrical characteristics compared to manual assembly of individual components.
Direct substitutes include other onsemi dual digital transistors in SOT-563 packages with similar NPN/PNP configurations and 100 kOhm bias resistors, such as the NSBC114 series variants, provided electrical ratings match.