NSBC115EPDXV6T1G

NSBC115EPDXV6T1G

$0.31
  • Description:SS SOT563 RSTR XSTR TR
  • Series:-

SKU:e92b825d1d01 Category: Brand:

  
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Product Detailed Parameters

  • Description:SS SOT563 RSTR XSTR TR
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):100kOhms
  • Resistor - Emitter Base (R2):100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:357mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSBC115EPDXV6T1G

Overview

The NSBC115EPDXV6T1G is a dual digital transistor from onsemi, featuring one NPN and one PNP bipolar junction transistor within a single SOT-563-6 surface-mount package. It integrates built-in bias resistors with a typical value of 100 kOhms and a ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. With a power dissipation rating of 500 mW and a minimum DC current gain (hFE) of 80, it operates across a temperature range of -55°C to +150°C.

Feature Summary

  • Dual configuration combining complementary NPN and PNP transistors in a compact footprint
  • Integrated base bias resistors simplify circuit design by reducing component count
  • High thermal stability supporting operation up to 150°C

Applications

  • General-purpose switching applications requiring complementary logic levels
  • Interface circuits for microcontrollers and digital logic gates
  • Driver stages for low-power loads in consumer electronics

Procurement Notes

Verify the complete part number including the suffix T1G to ensure compliance with RoHS directives and lead-free manufacturing standards. Confirm the specific revision level against the official datasheet to guarantee pinout compatibility and electrical parameter consistency during procurement.

Selection Notes

Select this component when a matched NPN/PNP pair with high input impedance is required. The 100 kOhm internal resistor suits low-drive current applications. Ensure the SOT-563-6 package fits the PCB layout constraints and that the 500 mW power dissipation meets the thermal requirements of the target environment.

Part Context

This device belongs to the NSBC115EPDXV6 series of pre-biased digital transistors. It serves as a solid-state alternative to discrete resistor-transistor networks, offering improved space efficiency and consistent electrical characteristics compared to manual assembly of individual components.

Replacement Considerations

Direct substitutes include other onsemi dual digital transistors in SOT-563 packages with similar NPN/PNP configurations and 100 kOhm bias resistors, such as the NSBC114 series variants, provided electrical ratings match.

NSBC115EPDXV6T1GNSBC115EPDXV6T1G
$0.31
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