SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSBC115TDP6T5G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical parameters include a typical input resistance of 100 kOhms, a minimum DC current gain (hFE) of 80, and a power dissipation rating of 357 mW. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix TDP6 against official onsemi documentation to confirm pinout and tape-and-reel specifications. Ensure compatibility with standard SOT-563 footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before final procurement.
Select this component when a dual NPN solution with pre-biased resistors is required to minimize board space. Compare the 100 mA current limit and 50 V voltage rating against load requirements. Consider the 357 mW power dissipation capability relative to ambient thermal conditions and heat sinking constraints in the final assembly.
This part belongs to the NSBC115EDXV6 series of digital transistors from onsemi. It shares functional similarities with other dual NPN devices in the family but differs in packaging and specific resistor values. The TDP6 suffix indicates a particular tape-and-reel configuration distinct from other variants like DXV6.
Potential substitutes include the NSBC115EDXV6T1G for identical functionality in different packaging. Verify pin-to-pin compatibility and electrical parameter equivalence before substitution.