NSBC115TPDP6T5G

Overview

The NSBC115TPDP6T5G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-963 surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design and reduce board space. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, a saturation voltage of 250 mV at 300 µA base current and 10 mA collector current, and a power dissipation rating of 339 mW. The component operates within a temperature range of -55 °C to +150 °C.

Feature Summary

• Integrates dual NPN transistors with monolithic bias networks to replace discrete components
• Reduces system cost and board space through simplified circuit design
• Eliminates the need for external input resistors for basic switching applications

Applications

• General-purpose switching circuits
• Interface driver applications
• Logic level translation

Procurement Notes

Verify the specific suffix 'P6' against the manufacturer's official documentation to confirm the exact reel quantity and tape-and-reel specifications. Ensure that the ordering information matches the required packaging format for automated assembly processes. Cross-reference the RoHS compliance status with the latest environmental declarations provided by onsemi before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for compact designs. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the application. Consider the SOT-963 package dimensions for PCB layout constraints and ensure thermal management strategies align with the 339 mW power dissipation limit under expected operating conditions.

Part Context

This part belongs to the NSBC114/NSBC115 series of Bipolar Digital Transistors from onsemi. These devices are designed to replace single transistors combined with external resistor networks. The series offers various configurations including complementary NPN/PNP pairs and dual NPN setups, all aimed at minimizing component count and simplifying biasing requirements in modern electronic systems.

Replacement Considerations

Potential substitutes include other dual NPN digital transistors in similar packages such as the NSBC114YDP6T5G or NSBC115EDXV6T1G, provided pinout compatibility and electrical ratings match. Verify internal resistor values and hFE characteristics carefully, as these vary significantly between different part numbers within the same family.