NSBC123EDXV6T1

Overview

The NSBC123EDXV6T1 is a dual NPN digital transistor from onsemi, housed in an SOT-563 package. It integrates two monolithic bias resistor transistors (BRTs), each containing a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 357 mW at 25°C. The internal resistors are R1 = 2.2 kΩ and R2 = 2.2 kΩ. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Integrates dual NPN transistors with built-in bias networks to replace discrete components
• Reduces printed circuit board space requirements and component count
• Designed for low power surface mount applications

Applications

• Low power surface mount circuits requiring board space optimization
• General purpose switching applications utilizing integrated biasing
• Digital logic interface circuits replacing discrete resistor networks

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status through manufacturer datasheets or certificates of conformity prior to integration into final assemblies.

Selection Notes

Select this component when dual NPN switching with integrated biasing is required in an SOT-563 footprint. Ensure the 2.2 kΩ resistor values align with the target drive conditions. Verify thermal dissipation limits relative to ambient operating temperatures.

Part Context

This part belongs to the NSBC1xxxDXV6T1 series of dual bias resistor transistors. It shares the SOT-563 package and general electrical characteristics with other variants in the family, distinguished primarily by its specific internal resistor network configuration.

Replacement Considerations

Direct substitutes within the same series include NSBC114EDXV6T1, NSBC124EDXV6T1, and NSBC143EDXV6T1. Selection depends on matching the specific R1 and R2 resistance values required by the circuit design.