NSBC123EDXV6T1G

Overview

The NSBC123EDXV6T1G is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates two NPN transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a maximum collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and typical input resistors of 2.2 kOhms. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Integrates dual NPN transistors with built-in bias resistors to replace discrete components
• Reduces printed circuit board space and component count
• Simplifies circuit design by eliminating external resistor networks

Applications

• General-purpose switching applications
• Driver circuits for logic outputs
• Replacement for discrete transistor and resistor combinations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and manufacturing site requirements. Ensure compliance with RoHS standards and check for any automotive qualification prefixes if required for the target application environment.

Selection Notes

Select this component when a compact solution for dual NPN switching is needed. The integrated bias network simplifies design compared to discrete parts. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the specific load requirements of the intended circuit application.

Part Context

This part belongs to the NSBC123EDXV6 series of digital transistors manufactured by onsemi. It is functionally related to the MUN5231DW1 but utilizes the SOT-563 package instead of SOT-363. The series is designed to provide a cost-effective and space-saving alternative to traditional discrete biasing networks.

Replacement Considerations

NSBC123EPDXV6T1G is a documented direct substitute within the same product family.