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The NSBC123EPDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates one NPN and one PNP silicon transistor with monolithic bias resistor networks. The device features a series base resistor (R1) of 2.2 kΩ and a base-emitter resistor (R2) of 2.2 kΩ for both transistors. Maximum ratings include a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Thermal characteristics specify a total device dissipation of 500 mW when both junctions are heated at 25°C ambient temperature.
Verify the specific ordering suffix and marking code against the manufacturer's official documentation before procurement. Confirm that the component meets all required environmental compliance standards for the intended application. Ensure compatibility with existing PCB footprint dimensions and soldering profiles specified in the datasheet.
Select this component when a complementary pair of pre-biased transistors is required in a minimal footprint. Verify that the 2.2 kΩ resistor values align with the target logic levels and drive currents. Consider the thermal resistance and power dissipation limits relative to the expected operating temperature range and duty cycle.
This part belongs to the NSBC114EPDXV6/D series of dual BRTs manufactured by onsemi. The series offers various resistor combinations within the same SOT-563 package to accommodate different biasing requirements while maintaining a consistent form factor for design flexibility.
Direct substitutes within the same series include NSBC113EPDXV6T1, NSBC143EPDXV6T1, and NSBC123JPDXV6T1. These alternatives share the SOT-563 package but feature different R1 and R2 resistor values. Verify electrical parameters match the original design requirements before substitution.