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Product Detailed Parameters
- Description：TRANS PREBIAS NPN/PNP 50V SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：8 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The NSBC123EPDXV6T1G is a dual digital transistor from onsemi, integrating one NPN and one PNP bipolar junction transistor with built-in bias resistors in a SOT-563 package. It operates with a maximum collector-emitter voltage of 50 V and supports a continuous collector current of 100 mA. The device features a typical input resistance of 22 kOhms for both transistors, maintaining a resistor ratio of 1. Power dissipation is rated at 357 mW, with an operating temperature range spanning from -55°C to +150°C. The minimum DC current gain (hFE) is specified at 60.
Feature Summary
- Integrates complementary NPN and PNP transistors with pre-biased resistors to simplify circuit design.
- Provides high current gain capability suitable for switching applications.
- Utilizes a compact surface-mount SOT-563 package for efficient board space utilization.
Applications
- General-purpose switching circuits requiring complementary logic levels.
- Driver stages for low-power loads in consumer electronics.
- Interface circuits between microcontrollers and peripheral devices.
Procurement Notes
Verify the complete part number including the suffix T1G to ensure RoHS compliance and lead-free status. Confirm the manufacturer is onsemi and the package type is SOT-563. Check datasheet revisions for any parameter updates before finalizing specifications for production use.
Selection Notes
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a small footprint. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Verify that the 22 kOhm base resistance aligns with the driving source impedance and desired switching speed.
Part Context
This component belongs to the NSBC124EPDXV6 series of digital transistors. It shares the same physical package and general electrical characteristics as other members of the family, differing primarily in internal resistor values or specific transistor configurations within the dual structure.
Replacement Considerations
Direct substitutes include NSBC123JPDXV6T1G. Verify pinout compatibility and electrical parameters against the original datasheet before substitution.
FAQ
What is the typical value of the built-in bias resistors?
The typical input resistance for both the NPN and PNP sections is 22 kOhms.
What is the maximum power dissipation of the device?
The maximum power dissipation (Pd) is 357 mW.
Does the device support high-temperature operation?
Yes, the device is rated for a maximum operating temperature of +150°C.
