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The NSBC123JDXV6T1 is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates two monolithic bias networks with R1 = 2.2 kΩ and R2 = 47 kΩ. The device supports a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Thermal characteristics include a total device dissipation of 357 mW at 25°C for one junction heated, or 500 mW when both are heated. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status as indicated by manufacturer markings. Ensure the selected variant matches the required resistor values and thermal ratings for the intended application environment.
Select this component when a dual NPN configuration with specific 2.2 kΩ and 47 kΩ bias resistors is required. Evaluate the 50 Vdc voltage rating and 100 mA current capacity against circuit demands. Consider the SOT-563 package dimensions for spatial constraints and verify thermal dissipation requirements relative to ambient temperature conditions.
This part belongs to the NSBC1xxxDXV6 series of dual BRTs manufactured by onsemi. These devices share the same SOT-563 footprint and general electrical limits but differ in internal resistor configurations. The series is designed to simplify digital switching circuits by integrating base biasing directly into the transistor package.
Direct substitutes within the same family include NSBC123EDXV6T1, which shares the SOT-563 package but utilizes different resistor values (R1=2.2kΩ, R2=2.2kΩ). Verify pinout compatibility and electrical parameters before substitution.