NSBC123JDXV6T1

NSBC123JDXV6T1

  • Description:TRANS 2NPN PREBIAS 0.5W SOT563
  • Series:-

SKU:a984be2fdc9b Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.5W SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

Download product information

NSBC123JDXV6T1

Overview

The NSBC123JDXV6T1 is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates two monolithic bias networks with R1 = 2.2 kΩ and R2 = 47 kΩ. The device supports a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Thermal characteristics include a total device dissipation of 357 mW at 25°C for one junction heated, or 500 mW when both are heated. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Integrates dual NPN transistors with monolithic bias resistor networks to replace discrete components
  • Designed for low power surface mount applications where board space is limited
  • Features lead-free solder plating and inherently Pb-Free packaging

Applications

  • Low power surface mount circuit designs requiring reduced component count
  • Applications prioritizing board space efficiency through integrated biasing
  • Digital transistor circuits replacing single devices with external resistor networks

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status as indicated by manufacturer markings. Ensure the selected variant matches the required resistor values and thermal ratings for the intended application environment.

Selection Notes

Select this component when a dual NPN configuration with specific 2.2 kΩ and 47 kΩ bias resistors is required. Evaluate the 50 Vdc voltage rating and 100 mA current capacity against circuit demands. Consider the SOT-563 package dimensions for spatial constraints and verify thermal dissipation requirements relative to ambient temperature conditions.

Part Context

This part belongs to the NSBC1xxxDXV6 series of dual BRTs manufactured by onsemi. These devices share the same SOT-563 footprint and general electrical limits but differ in internal resistor configurations. The series is designed to simplify digital switching circuits by integrating base biasing directly into the transistor package.

Replacement Considerations

Direct substitutes within the same family include NSBC123EDXV6T1, which shares the SOT-563 package but utilizes different resistor values (R1=2.2kΩ, R2=2.2kΩ). Verify pinout compatibility and electrical parameters before substitution.

NSBC123JDXV6T1NSBC123JDXV6T1

Click on the inquiry