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The NSBC123JDXV6T1G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two NPN transistors with typical base resistors of 2.2 kOhms and a resistor ratio of 0.047. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 357 mW, with a minimum DC current gain (hFE) of 80. Operating temperatures range from -55°C to +150°C.
Verify the complete part number including the suffix T1G to ensure correct packaging and RoHS compliance status. Confirm that the SOT-563-6 footprint matches the target PCB layout. Check manufacturer documentation for any recent product change notices or lifecycle status updates before finalizing procurement plans.
Select this component when a dual NPN configuration with low input resistance is required. The 2.2 kOhm typical base resistor suits applications needing higher drive currents compared to higher resistance variants. Ensure the 50 V voltage rating and 100 mA current limit align with the specific circuit requirements.
This part belongs to the NSBC123JDXV6 series of digital transistors. It shares the same physical package and general electrical characteristics as other members of the family but differs in internal resistor values. It serves as a complementary solution to PNP-only or complementary NPN/PNP pairs within the same product line.
Direct substitutes include NSBC123JPDXV6T1G for complementary configurations or NSBA123EDXV6T1G for PNP equivalents. Verify pin compatibility and resistor values when replacing with other SOT-563 digital transistors from different manufacturers.