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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.5W SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The NSBC123JDXV6T5 is a dual NPN digital transistor from onsemi, housed in an SOT-563 package. It integrates two monolithic bias resistor networks with the transistors to simplify circuit design and reduce board space. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 357 mW at 25°C. The internal resistors are R1 = 2.2 kΩ and R2 = 47 kΩ. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Integrates dual NPN transistors with monolithic bias resistor networks
- Reduces component count and simplifies circuit design
- Suitable for low-power surface mount applications
Applications
- Low power surface mount applications
- Circuit designs requiring reduced board space
- Applications replacing discrete devices and external resistor bias networks
Procurement Notes
Verify the specific ordering suffix required for your application, as tape and reel specifications vary by quantity. Confirm lead-free status and RoHS compliance through official documentation before procurement. Check for any recent product change notices regarding packaging or material composition updates.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is needed. Ensure the 50V voltage rating and 100mA current capacity meet the circuit requirements. Verify that the 2.2kΩ base resistor and 47kΩ emitter resistor values align with the desired drive characteristics.
Part Context
This part belongs to the NSBC1xxxDXV6 series of dual bias resistor transistors. It shares the SOT-563 package and general electrical characteristics with other variants in the family, differing primarily in the internal resistor values and specific marking codes assigned to each combination.
Replacement Considerations
NSBC123EDXV6T1
FAQ
What are the internal resistor values for the NSBC123JDXV6T5?
The internal resistors are R1 = 2.2 kΩ and R2 = 47 kΩ.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
Is the NSBC123JDXV6T5 available in a lead-free package?
Yes, the SOT-563 package is inherently lead-free, and 'G' suffix versions are also available.
