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The NSBC123JPDP6T5G is a complementary digital transistor array manufactured by onsemi, featuring dual NPN and PNP transistors in a single SOT-963 surface-mount package. It provides a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device dissipates up to 357 mW of power and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a minimum DC current gain (hFE) of 80 and a typical input resistance of 2.2 kOhms.
Verify the specific suffix DP6T5G against official onsemi documentation to confirm the SOT-963 package configuration. Ensure that the required operating temperature range and power dissipation limits align with the target application's thermal constraints before finalizing procurement decisions.
Select this component when space-constrained designs require both NPN and PNP switching capabilities. The integrated resistor network reduces board area compared to discrete solutions. Confirm that the 100 mA current limit meets load requirements and that the 50 V voltage rating exceeds the maximum circuit potential.
This part belongs to onsemi's BRT (Bias Resistor Transistor) family, designed to replace multiple discrete components. It simplifies assembly by combining active switching elements with passive biasing networks. The complementary configuration allows for efficient push-pull or differential driving schemes in compact form factors.
NSBC123JPDXV6T1G