NSBC123JPDP6T5G

NSBC123JPDP6T5G

$0.29
  • Description:TRANS PREBIAS 2NPN 50V SOT963
  • Series:-

SKU:08ba6d850633 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS 2NPN 50V SOT963
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:339mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-963
  • Supplier Device Package:SOT-963

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NSBC123JPDP6T5G

Overview

The NSBC123JPDP6T5G is a complementary digital transistor array manufactured by onsemi, featuring dual NPN and PNP transistors in a single SOT-963 surface-mount package. It provides a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device dissipates up to 357 mW of power and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a minimum DC current gain (hFE) of 80 and a typical input resistance of 2.2 kOhms.

Feature Summary

  • Integrates complementary NPN and PNP bipolar junction transistors into a single compact component
  • Includes built-in biasing resistors to simplify circuit design and reduce external component count
  • Supports high-temperature operation with a maximum junction temperature rating of 150°C

Applications

  • General-purpose switching applications requiring complementary logic levels
  • Driver circuits for low-power loads such as LEDs or relays
  • Interface buffering between microcontrollers and peripheral devices

Procurement Notes

Verify the specific suffix DP6T5G against official onsemi documentation to confirm the SOT-963 package configuration. Ensure that the required operating temperature range and power dissipation limits align with the target application's thermal constraints before finalizing procurement decisions.

Selection Notes

Select this component when space-constrained designs require both NPN and PNP switching capabilities. The integrated resistor network reduces board area compared to discrete solutions. Confirm that the 100 mA current limit meets load requirements and that the 50 V voltage rating exceeds the maximum circuit potential.

Part Context

This part belongs to onsemi's BRT (Bias Resistor Transistor) family, designed to replace multiple discrete components. It simplifies assembly by combining active switching elements with passive biasing networks. The complementary configuration allows for efficient push-pull or differential driving schemes in compact form factors.

Replacement Considerations

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