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Product Detailed Parameters
- Description：TRANS PREBIAS NPN/PNP SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The NSBC123JPDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates one NPN and one PNP transistor with monolithic bias resistor networks. The device features a typical series base resistor (R1) of 2.2 kOhms and a base-emitter resistor (R2) of 47 kOhms. Maximum ratings include a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. Total device power dissipation is 357 mW at 25°C for one junction heated. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Integrates complementary NPN and PNP transistors with built-in bias resistors to replace discrete components.
- Designed for low-power surface mount applications where board space is limited.
Applications
- Low power surface mount applications
- Circuit design simplification
- Board space reduction
Procurement Notes
Verify the component against official datasheets to confirm electrical parameters and pinout compatibility before integration. Ensure the ordering suffix matches the required packaging specifications. Confirm RoHS compliance status as indicated in the manufacturer documentation.
Selection Notes
Select this component when a complementary pair of digital transistors with specific 2.2 kOhm and 47 kOhm bias resistors is required. Consider the SOT-563 package constraints and thermal dissipation limits relative to the application's ambient temperature and power requirements.
Part Context
This part belongs to the NSBC114EPDXV6T1 series of Dual Bias Resistor Transistors. It shares the same physical package and general maximum ratings with other variants in the series, differing primarily in the internal resistor values and specific transistor configurations.
Replacement Considerations
NSBC123JPDXV6T1G is a verified direct replacement offering Pb-Free packaging while maintaining identical electrical characteristics and pinout compatibility.
FAQ
What are the specific resistor values for the NSBC123JPDXV6T1?
The device has a typical series base resistor (R1) of 2.2 kOhms and a base-emitter resistor (R2) of 47 kOhms.
What is the maximum collector-emitter voltage for this component?
The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.
