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The NSBC123JPDXV6T5 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates one NPN and one PNP silicon transistor with monolithic bias resistor networks. The device features a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Internal resistors are configured as R1 = 2.2 kOhms and R2 = 47 kOhms for both transistors. Thermal dissipation reaches 357 mW at 25°C with one junction heated, or 500 mW with both junctions heated. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging pitch and reel specifications. Confirm RoHS compliance status directly with the manufacturer, as historical data indicates variations within this series. Ensure the component source matches the original manufacturer's authorized distribution channels to guarantee authenticity and traceability.
Select this component when a complementary NPN/PNP pair with asymmetric biasing is required. The 2.2 kOhm base resistor and 47 kOhm emitter resistor configuration provides specific drive characteristics suitable for logic interfacing. Verify that the SOT-563 footprint aligns with the target PCB layout constraints before finalizing the design.
This part belongs to the NSBC114EPDXV6T1 series family, which includes various combinations of NPN and PNP transistors with different internal resistor values. While sharing the same physical package and general electrical limits, each variant offers unique resistance ratios tailored for specific biasing requirements in digital switching applications.
Direct substitutes include NSBC123JPDXV6T1G and NSBC123JPDXV6T5G. These variants maintain identical electrical characteristics and pinout configurations while potentially differing in lead-free certification or tape-and-reel specifications.