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The NSBC123TDP6T5G is a dual digital transistor from onsemi, integrating two NPN transistors with built-in bias resistors into a single SOT-563-6 surface-mount package. This configuration provides a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device features a typical input resistance of 2.2 kOhms and a minimum DC current gain (hFE) of 8. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 357 mW.
Verify the exact ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet or product compliance reports before finalizing procurement plans.
Select this component when a dual NPN configuration with integrated biasing is required to reduce board space and external component count. Ensure the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the NSBC123 series of dual digital transistors manufactured by onsemi. It shares the same internal topology as other variants in the family but is distinguished by its specific packaging and commercial-grade temperature ratings defined in the official product specification.
Direct substitutes include NSBC123EDXV6T1G and NSBC123JPDXV6T1G, which share identical electrical characteristics and pinout configurations. Verify package compatibility and specific suffix variations before implementation.