NSBC123TPDP6T5G

Overview

The NSBC123TPDP6T5G is a dual pre-biased bipolar transistor array from onsemi, integrating one NPN and one PNP device in a single SOT-963 surface-mount package. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The typical input resistance is 2.2 kOhms with a standard resistor ratio of 0.047. Power dissipation reaches 339mW, operating within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors into a single compact component
• Includes built-in bias resistors to simplify circuit design and reduce board space
• Provides low saturation voltage for efficient switching performance

Applications

• General-purpose switching applications
• Driver circuits for small loads
• Logic interface buffering

Procurement Notes

Verify the specific SOT-963 package designation against your PCB footprint requirements before ordering. Confirm that the integrated resistor values meet your drive current specifications. Ensure the thermal management plan supports the specified power dissipation limits under your intended operating conditions.

Selection Notes

Select this component when space constraints require combining two discrete transistors and their associated biasing networks. It serves as a direct replacement for separate NPN and PNP devices where complementary logic levels are needed. Consider the 50V rating and 100mA current limit to ensure adequate headroom for your specific application load.

Part Context

This part belongs to onsemi's series of pre-biased digital transistors designed to replace multiple discrete components. These arrays streamline designs by providing both the switching element and necessary base resistors in one package, reducing assembly complexity and improving reliability compared to traditional discrete solutions.

Replacement Considerations

NSBC123JPDXV6T1G