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The NSBC124EDP6T5G is a dual digital transistor from onsemi, featuring two NPN transistors integrated with bias resistors in an SOT-963-6 package. It supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device has a power dissipation rating of 357 mW and operates within a temperature range of -55°C to +150°C. Typical input resistance is 10 kOhms with a resistor ratio of 1.
Verify the specific suffix 'T5G' against official datasheets to confirm tape-and-reel packaging and RoHS compliance status. Ensure the ordering part number matches the exact pinout and electrical characteristics required for the target design. Cross-reference with manufacturer documentation to validate availability and lead times prior to procurement.
Select this component when a dual NPN configuration with integrated biasing is required in a small footprint. The 50 V rating and 100 mA current capacity suit low-to-medium power switching tasks. Consider the SOT-963-6 package dimensions for PCB layout constraints and thermal management requirements relative to the 357 mW dissipation limit.
This part belongs to the NSBC series of digital transistors manufactured by onsemi. These devices are designed to simplify circuit design by combining transistors and resistors into a single package. The series offers various configurations and resistance values to accommodate different logic levels and drive requirements.
NSBC124EPDXV6T1G
The NSBC124EDP6T5G contains two NPN transistors.
The typical input resistance is 10 kOhms.