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The NSBC124EDXV6T1 is a dual NPN silicon surface mount transistor with a monolithic bias resistor network, housed in an SOT-563 package. It integrates two Bias Resistor Transistors (BRT) to replace discrete devices and external resistors. Key electrical parameters include a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total device power dissipation of 357 mW at 25°C. The internal bias resistors are specified as R1 = 22 kOhms and R2 = 22 kOhms. The DC current gain (hFE) ranges from a minimum of 60 to a maximum of 100 at IC = 5.0 mA and VCE = 10 V.
Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Confirm RoHS compliance status and lead-free solder plating requirements prior to procurement. Ensure the selected variant matches the required resistor values and package type for the intended application.
Select this component when a dual NPN configuration with integrated biasing is required to minimize board space. Verify that the 22 kOhm resistor values align with the target circuit's input impedance needs. Ensure the operating temperature range of -55°C to +150°C meets the environmental conditions of the final assembly.
This part belongs to the NSBC1xxxDXV6 series of dual bias resistor transistors manufactured by onsemi. It shares the SOT-563 package and general electrical characteristics with other variants in the family, distinguished primarily by the specific values of the integrated monolithic bias resistors.
Direct substitutes within the same series include NSBC114EDXV6T1 and NSBC144EDXV6T1, provided their respective resistor values are compatible with the circuit design.