NSBC124EDXV6T1G

Overview

The NSBC124EDXV6T1G is a dual digital transistor from onsemi, integrating one NPN and one PNP bipolar junction transistor within a single SOT-563-6 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current rating of 100 mA for both polarities. The device includes typical internal base resistors of 22 kOhms with a resistance ratio of 1. Key electrical specifications include a minimum DC current gain (hFE) of 60, a power dissipation capability of 357 mW, and an operating temperature range spanning from -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors into a single compact component to reduce circuit board space.
• Includes built-in internal base resistors to simplify biasing networks and minimize external component count.
• Designed for high thermal stability with a maximum junction temperature rating of 150°C.

Applications

• General-purpose switching applications in consumer electronics
• Driver circuits for low-power loads requiring complementary logic levels
• Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as these details are subject to change based on production schedules and regional availability.

Selection Notes

Select this component when a complementary pair of NPN and PNP switches is required in a minimal footprint. Ensure the 50 V voltage rating and 100 mA current limit align with the specific load requirements. Verify that the 22 kOhm internal base resistance matches the driving source capabilities and desired switching speed for the target application.

Part Context

This part belongs to the NSBC124EPDXV6 series of digital transistors manufactured by onsemi. It is designed as a drop-in replacement for discrete resistor-transistor networks, offering improved consistency and reduced assembly complexity compared to using separate components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consult the manufacturer's official cross-reference guide for verified alternatives.