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The NSBC124EPDP6T5G is a complementary Bias Resistor Transistor (BRT) from onsemi, integrating an NPN and a PNP transistor with monolithic bias resistor networks into a single SOT-963 package. It features a typical input resistance of 22 kΩ for both R1 and R2, with a resistor ratio of 1.0. The device supports a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current of 100 mAdc. Thermal dissipation reaches 339 mW when both junctions are heated. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix T5G confirms the SOT-963 package and tape-and-reel shipping configuration. Confirm RoHS compliance status as required by project specifications. Ensure the procurement channel provides valid traceability documentation for the semiconductor components.
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a small footprint. Verify that the 50 V collector-emitter voltage rating meets the circuit requirements. Check thermal constraints against the 339 mW dissipation limit under simultaneous operation conditions.
This part belongs to the NSBC124EPDP6 series of digital transistors. It shares electrical characteristics with the MUN5312DW1 and NSBC124EPDXV6 variants, differing primarily in the physical package style. The SOT-963 package offers a distinct pinout compared to the SC-88 or SOT-563 alternatives.
NSBC124EPDXV6T1G is listed as a direct substitute. MUN5312DW1T1G serves as another compatible option. Verify pin compatibility and package dimensions before substituting.