NSBC124EPDXV6T1

Overview

The NSBC124EPDXV6T1 is a dual Bias Resistor Transistor (BRT) containing one NPN and one PNP silicon transistor with monolithic bias resistor networks in an SOT-563 package. It features a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total device power dissipation of 500 mW when both junctions are heated. The integrated resistors consist of R1 at 22 kOhms and R2 at 22 kOhms. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors with internal biasing resistors to replace discrete components
• Designed for low-power surface mount applications requiring minimal board space
• Eliminates external resistor networks by housing monolithic bias circuits within the package

Applications

• Low power surface mount circuit designs
• Applications where board space is limited
• Digital switching circuits requiring complementary transistor pairs

Procurement Notes

Verify the specific ordering suffix and marking code against official documentation before procurement. Confirm that the component meets all required environmental standards and packaging specifications for the intended manufacturing process. Ensure compatibility with existing design parameters.

Selection Notes

Select this component when a complementary NPN/PNP pair with fixed 22 kOhm bias resistors is required. Verify that the 50 Vdc voltage rating and 100 mA current capacity align with the circuit requirements. Consider the SOT-563 package dimensions for layout constraints.

Part Context

This part belongs to the NSBC114EPDXV6 series of dual Bias Resistor Transistors manufactured by onsemi. The series includes various resistor combinations housed in the SOT-563 package. This specific model provides a balanced 22 kOhm/22 kOhm resistor configuration for both the NPN and PNP channels.

Replacement Considerations

NSBC114EPDXV6T1

FAQ

What are the values of the integrated bias resistors?

The integrated bias resistors R1 and R2 are both 22 kOhms.

What is the maximum power dissipation for this device?

The maximum total device power dissipation is 500 mW when both junctions are heated.

Does this component contain both NPN and PNP transistors?

Yes, it contains one NPN and one PNP transistor with monolithic bias resistor networks.