NSBC124EPDXV6T1G

Overview

The NSBC124EPDXV6T1G is a complementary Bias Resistor Transistor (BRT) containing one NPN and one PNP transistor with monolithic bias resistor networks. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device integrates a series base resistor (R1) of 22 kOhms and a base-emitter resistor (R2) of 22 kOhms, yielding a typical resistor ratio of 1.0. Total device dissipation reaches 500 mW when both junctions are heated at 25°C ambient temperature. It is housed in an SOT-563 package.

Feature Summary

• Integrates dual transistors with internal bias resistors to replace discrete components
• Simplifies circuit design by reducing board space and component count
• Supports automotive applications through AEC-Q101 qualification and PPAP capability

Applications

• Automotive systems requiring unique site and control change requirements
• General-purpose digital switching circuits
• Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details and compliance status. Confirm RoHS and Pb-Free specifications directly from the manufacturer's datasheet before procurement. Ensure the selected variant matches the required thermal characteristics for the intended operating environment.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is required. Verify that the 22 kOhm input resistance aligns with the driving source capabilities. Check the thermal derating curves to ensure power dissipation limits are not exceeded under maximum load conditions.

Part Context

This part belongs to the NSBC124EPDXV6 series of complementary BRTs manufactured by onsemi. It shares functional similarities with other devices in the DTC124EP family but utilizes the SOT-563 package format. The 'G' suffix indicates Pb-Free construction compliant with RoHS standards.

Replacement Considerations

NSBC124EPDXV6T1G