SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSBC124XDXV6T1 is a dual NPN digital transistor from onsemi, housed in an SOT-563 package. It integrates two bias resistor transistors (BRT) with monolithic bias networks. Key electrical parameters include a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The device features a typical base resistor (R1) of 22 kOhms and an emitter-base resistor (R2) of 47 kOhms. DC current gain (hFE) ranges from 60 to 100 at 5 mA and 10 V. Total power dissipation is rated at 357 mW for one junction heated and 500 mW for both junctions heated.
Verify the specific part number suffix against official manufacturer documentation to confirm availability and lead times. Check for RoHS compliance status and ensure the ordering code matches the required packaging quantity. Confirm that the component meets all environmental and regulatory standards relevant to your region before finalizing procurement.
Select this component when a dual NPN configuration with specific 22k/47k bias resistors is required. Ensure the 50V voltage rating and 100mA current capacity meet the circuit demands. Verify thermal dissipation requirements against the specified power ratings for the intended operating temperature range.
This component belongs to the NSBC1xxxDXV6 series of dual bias resistor transistors. It shares the same SOT-563 package and general electrical characteristics as other variants in the family, differing primarily in the internal resistor values. The 'G' suffix indicates a lead-free package version.
Direct substitutes include NSBC124EDXV6T1 and NSBC124XDXV6T1G. Verify pinout compatibility and resistor values when considering alternative manufacturers or updated revisions.