NSBC124XPDXV6T1

Overview

The NSBC124XPDXV6T1 is a dual Bias Resistor Transistor (BRT) containing one NPN and one PNP silicon transistor with monolithic bias resistor networks in an SOT-563 package. It features a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 500 mW when both junctions are heated. The integrated resistors are R1 = 22 kOhms and R2 = 47 kOhms. DC current gain ranges from 60 to 100 at 5.0 mA and 10 V. Operating temperature spans -55°C to +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors with dedicated bias resistor networks into a single surface-mount component.
• Reduces printed circuit board space requirements by eliminating discrete external biasing components.

Applications

• Low power surface mount applications where board space is limited.
• Digital switching circuits requiring simplified design through integrated biasing.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details such as tape and reel specifications. Confirm RoHS compliance status directly with the supplier or datasheet revision notes prior to procurement. Ensure the component marking matches the specified device code for the intended application.

Selection Notes

Select this component when a complementary pair of digital transistors with specific 22 kOhm and 47 kOhm bias resistors is required. Verify that the SOT-563 package dimensions fit the available footprint. Check thermal derating curves if operating near maximum ambient temperatures to ensure power dissipation limits are not exceeded.

Part Context

This part belongs to the NSBC114EPDXV6 series of dual BRTs manufactured by onsemi. It shares the same SOT-563 package and general electrical ratings as other members of the family, distinguished primarily by its unique internal resistor values and device marking code '34'.

Replacement Considerations

NSBC124EPDXV6T1G