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The NSBC124XPDXV6T5G is a dual Bias Resistor Transistor (BRT) containing complementary NPN and PNP silicon surface mount transistors with monolithic bias resistor networks. It integrates two resistors per transistor into a single SOT-563 package to replace discrete devices and external bias networks. The device features a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total power dissipation of 357 mW at 25°C for one junction or 500 mW for both. The internal resistor network consists of a series base resistor (R1) of 22 kOhms and a base-emitter resistor (R2) of 47 kOhms.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status directly from the manufacturer's datasheet before procurement. Ensure the selected variant matches the required tape and reel specifications for automated assembly processes.
Select this component when a dual complementary digital transistor configuration is required within a compact footprint. Verify that the integrated 22 kOhm and 47 kOhm resistor values align with the target circuit's biasing requirements. Ensure the SOT-563 package dimensions fit the available PCB real estate constraints.
This part belongs to the NSBC114EPDXV6T1 series family of dual Bias Resistor Transistors manufactured by onsemi. These devices are designed to simplify circuit design by integrating transistors and bias resistors into a single surface mount package, reducing overall board space and component count compared to discrete solutions.