NSBC124XPDXV6T5G

NSBC124XPDXV6T5G

$0.08
  • Description:TRANS PREBIAS NPN/PNP SOT563
  • Series:-

SKU:c94b2dd06211 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN/PNP SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSBC124XPDXV6T5G

Overview

The NSBC124XPDXV6T5G is a dual Bias Resistor Transistor (BRT) containing complementary NPN and PNP silicon surface mount transistors with monolithic bias resistor networks. It integrates two resistors per transistor into a single SOT-563 package to replace discrete devices and external bias networks. The device features a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total power dissipation of 357 mW at 25°C for one junction or 500 mW for both. The internal resistor network consists of a series base resistor (R1) of 22 kOhms and a base-emitter resistor (R2) of 47 kOhms.

Feature Summary

  • Integrates dual complementary BJT devices with monolithic bias resistor networks
  • Eliminates the need for individual external bias components
  • Designed for low power surface mount applications

Applications

  • Low power surface mount circuit designs
  • Applications requiring board space reduction
  • Circuit designs needing component count minimization

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status directly from the manufacturer's datasheet before procurement. Ensure the selected variant matches the required tape and reel specifications for automated assembly processes.

Selection Notes

Select this component when a dual complementary digital transistor configuration is required within a compact footprint. Verify that the integrated 22 kOhm and 47 kOhm resistor values align with the target circuit's biasing requirements. Ensure the SOT-563 package dimensions fit the available PCB real estate constraints.

Part Context

This part belongs to the NSBC114EPDXV6T1 series family of dual Bias Resistor Transistors manufactured by onsemi. These devices are designed to simplify circuit design by integrating transistors and bias resistors into a single surface mount package, reducing overall board space and component count compared to discrete solutions.

Replacement Considerations

  • NSBC124XPDXV6T1G

NSBC124XPDXV6T5GNSBC124XPDXV6T5G
$0.08
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