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The NSBC143EDXV6T1 is a dual bias resistor transistor (BRT) from onsemi, featuring two NPN silicon transistors integrated with monolithic bias networks in an SOT-563 package. It provides a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Each transistor includes a base resistor (R1) of 4.7 kOhms and a base-emitter resistor (R2) of 4.7 kOhms. The device has a maximum power dissipation of 500 mW when both junctions are heated and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status as indicated by manufacturer markings. Ensure the selected variant matches the required resistor values and thermal characteristics for the intended application environment.
Select this component when a dual NPN configuration with equal 4.7 kOhm biasing resistors is required. Consider the SOT-563 package dimensions for PCB layout constraints. Evaluate the 500 mW total power dissipation limit under expected operating temperatures to ensure safe operation margins.
This part belongs to the NSBC1xxxDXV6T1 series of dual BRTs from onsemi. These devices share the same SOT-563 footprint but vary in internal resistor ratios and transistor types. The 'ED' designation specifically indicates the NPN configuration with 4.7k/4.7k resistor values.
Direct pin-compatible substitutes include other NSBC1xxxDXV6T1 variants with different resistor values if electrical parameters allow. Verify that any replacement maintains the 50V VCEO rating and 100mA IC capability.