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Product Detailed Parameters
- Description：TRANS PREBIAS NPN/PNP SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
Download product information
Overview
The NSBC143EPDXV6T1 is a dual bias resistor transistor (BRT) containing one NPN and one PNP silicon surface mount transistor with monolithic bias resistor networks. It integrates two resistors per device: a series base resistor and a base-emitter resistor, eliminating external components. The component operates within a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Thermal dissipation reaches 500 mW when both junctions are heated. Resistor values for this specific part number are R1 = 4.7 kOhms and R2 = 4.7 kOhms.
Feature Summary
- Integrates complementary NPN and PNP transistors with monolithic bias resistor networks to replace discrete devices and external resistor biasing circuits.
- Housed in the SOT-563 package designed for low power surface mount applications where board space is limited.
Applications
- Low power surface mount applications requiring compact circuit design.
- Digital switching circuits utilizing integrated bias networks.
- Complementary logic interface designs replacing single devices and external resistor networks.
Procurement Notes
Verify the exact ordering suffix against official documentation before procurement. Confirm RoHS compliance status as manufacturing processes evolve. Ensure the supplier provides valid traceability data matching the manufacturer's specifications. Cross-reference the datasheet revision date to confirm electrical characteristics align with current production standards.
Selection Notes
Select this component when a complementary NPN/PNP pair with identical 4.7 kOhm bias resistors is required. Verify that the 50 Vdc breakdown voltage and 100 mA current limits meet the application requirements. Consider the SOT-563 footprint constraints during PCB layout. Validate thermal dissipation capabilities under maximum operating conditions.
Part Context
This component belongs to the NSBC114EPDXV6/D series manufactured by onsemi. The series includes various combinations of NPN and PNP transistors with different internal resistor values housed in the SOT-563 package. The NSBC143EPDXV6T1 specifically denotes the variant with 4.7 kOhm resistors for both R1 and R2.
Replacement Considerations
NSBC143EPDXV6T1G
FAQ
What are the specific resistor values for the NSBC143EPDXV6T1?
The internal bias network consists of a series base resistor (R1) of 4.7 kOhms and a base-emitter resistor (R2) of 4.7 kOhms.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.
How many transistors are contained within the package?
The package contains two complementary transistors: one NPN and one PNP.
