NSBC143TDXV6T1

Overview

The NSBC143TDXV6T1 is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates two NPN transistors with monolithic bias resistor networks to replace discrete components. Key electrical parameters include a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The device features a base resistor (R1) of 4.7 kOhms and an open emitter resistor (R2). DC current gain (hFE) ranges from 80 to 150 at 5 mA and 10 V. Total power dissipation is rated at 500 mW when both junctions are heated.

Feature Summary

• Integrates dual NPN transistors with monolithic bias resistor networks into a single surface-mount device.
• Reduces printed circuit board space requirements by eliminating external biasing components.
• Simplifies circuit design through integrated series base and base-emitter resistors.

Applications

• Low power surface mount applications where board space is limited.
• Digital switching circuits requiring simplified bias networks.
• General-purpose small signal transistor arrays.

Procurement Notes

Verify the specific ordering suffix for tape and reel specifications before procurement. Confirm RoHS compliance status as indicated by the 'G' suffix if lead-free solder plating is required. Ensure the component marking matches the datasheet table for the specific resistor combination. Check for any product change notices regarding packaging or manufacturing location updates.

Selection Notes

Select this component when a dual NPN configuration with specific 4.7 kOhm base resistance is needed. Verify that the 50 V collector-emitter voltage rating meets the circuit requirements. Consider the 100 mA continuous current limit for load handling. Compare thermal resistance values against available heat dissipation paths in the application environment.

Part Context

This part belongs to the NSBC1xxxDXV6T1 series of dual bias resistor transistors. It shares the SOT-563 package and general electrical characteristics with other variants in the family, distinguished primarily by internal resistor values. The series is designed to streamline the integration of digital transistors in compact electronic designs.

Replacement Considerations

Direct substitutes within the same series include NSBC143EDXV6T1, which differs only in having a finite emitter resistor value instead of an open connection. Other variants like NSBC114TDXV6T1 share the open R2 configuration but utilize different base resistance values.