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The NSBC143TDXV6T1G is a dual NPN bipolar digital transistor (BRT) manufactured by onsemi. It integrates two NPN transistors with built-in bias resistors in a compact SOT-563-6 surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It features a typical input resistance of 4.7 kOhms and a minimum DC current gain (hfe) of 160. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 357 mW.
Verify the specific suffix T1G against the manufacturer's latest documentation to confirm pinout and electrical characteristics, as suffixes can indicate variations in packaging or process. Confirm availability status directly with authorized distributors, as this part may be subject to end-of-life notices or limited stock conditions.
Select this component when a dual NPN configuration with integrated biasing is required. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Compare the 4.7 kOhm input resistance and hfe of 160 against alternative BRTs if specific drive currents or gain levels are critical for the application performance.
This part belongs to the NSBC143 series of dual digital transistors from onsemi. It shares the SOT-563-6 form factor with other variants in the family but differs in internal resistor values and transistor polarity. It serves as a direct replacement for discrete resistor-transistor networks in compact designs.
Publicly confirmed substitute part numbers for NSBC143TDXV6T1G were not found in the provided source material. Verify compatibility with alternatives like NSBC143EPDXV6T1G or NSBC143EDXV6T1G only after confirming identical pinouts and electrical parameters through official datasheets.