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Product Detailed Parameters
- Description：TRANS BR NPN/PNP DUAL 50V SOT563
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT),Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
Download product information
Overview
The NSBC143TPDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates one NPN and one PNP silicon transistor with monolithic bias resistor networks. The device features a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. Electrical characteristics include a DC current gain (hFE) of 160 at 5 mA and 10 V, and a maximum collector-emitter saturation voltage of 0.25 Vdc at 10 mA. Thermal dissipation is rated at 357 mW for one junction and 500 mW for both junctions heated.
Feature Summary
- Integrates complementary NPN and PNP transistors with internal bias resistors to replace discrete components
- Designed for low power surface mount applications where board space is limited
- Eliminates external resistor bias networks to simplify circuit design
Applications
- Low power surface mount applications requiring compact component footprints
- Circuit designs needing integrated biasing for digital switching
- Complementary transistor arrays for signal processing or logic interfacing
Procurement Notes
Verify the specific ordering suffix and marking code against the manufacturer's official documentation before procurement. Confirm that the component meets all required environmental standards and packaging specifications for the intended manufacturing process. Ensure compatibility with existing supply chain requirements.
Selection Notes
Select this component when a complementary pair of pre-biased transistors is required in a minimal footprint. Verify that the internal resistor values align with the target circuit's drive requirements. Consider the thermal dissipation limits and operating temperature range during the design phase to ensure reliable performance under load.
Part Context
This part belongs to the NSBC114EPDXV6 series of dual BRTs manufactured by onsemi. These devices are designed to consolidate multiple discrete components into a single surface-mount package. The series offers various resistor combinations to suit different biasing needs while maintaining a consistent form factor for easy integration into PCB layouts.
Replacement Considerations
- NSBC143TPDXV6T1G
FAQ
What are the internal resistor values for the NSBC143TPDXV6T1?
The device includes a base resistor (R1) of 4.7 kOhms and an open base-emitter resistor (R2).
What is the maximum power dissipation for this device?
The total device dissipation is 357 mW when one junction is heated and 500 mW when both junctions are heated at 25°C ambient temperature.
Does this component contain both NPN and PNP transistors?
Yes, the NSBC143TPDXV6T1 contains one NPN and one PNP transistor within a single SOT-563 package.
