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The NSBC143TPDXV6T5G is a dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP silicon transistor with monolithic bias resistor networks in an SOT-563 package. It features a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The device includes a series base resistor (R1) of 4.7 kOhms and lacks a base-emitter resistor (R2). Electrical characteristics specify a minimum DC current gain (hFE) of 160 at 5.0 mA and 10 V. Thermal ratings include a total device dissipation of 357 mW for one junction heated and 500 mW for both junctions heated at 25°C ambient temperature.
Verify the specific ordering suffix T5G against official documentation to confirm tape and reel specifications. Confirm RoHS compliance status as indicated by the manufacturer's current product labeling. Ensure the component matches the required SOT-563 package dimensions for your PCB footprint.
Select this component when a complementary pair of pre-biased transistors is required in a compact form factor. The 4.7 kOhm input resistance suits applications needing moderate drive currents. Verify that the 50 V breakdown voltage meets the system requirements.
This part belongs to the NSBC114EPDXV6 series of dual BRTs manufactured by onsemi. The series offers various resistor combinations within the same SOT-563 package to provide flexibility for different biasing needs without changing the physical footprint.
Direct substitutes include NSBC143TPDXV6T1G. Other variants in the NSBC114EPDXV6 series may be compatible if the resistor values differ but the package and electrical ratings are suitable.