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The NSBC143ZDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, featuring two NPN silicon transistors integrated with monolithic bias resistor networks in an SOT-563 package. It provides a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device incorporates a series base resistor (R1) of 4.7 kOhms and a base-emitter resistor (R2) of 47 kOhms. Thermal characteristics include a total device dissipation of 357 mW at 25°C for one junction heated, or 500 mW when both junctions are heated.
Verify the specific ordering suffix and package type against the manufacturer's latest documentation before procurement. Confirm that the component meets all required environmental standards and thermal ratings for the intended operating conditions. Ensure compatibility with existing assembly processes and verify availability through authorized distribution channels.
Select this component when a dual NPN configuration with asymmetric bias resistors is required. The 4.7 kOhm input resistance and 47 kOhemitter feedback resistor define the specific drive characteristics. Evaluate the thermal dissipation limits relative to the ambient temperature and ensure the SOT-563 package fits the available footprint constraints.
This part belongs to the NSBC1xxxDXV6T1 series of dual BRTs manufactured by onsemi. These devices are designed to simplify circuit design by integrating bias networks directly onto the silicon die. The series offers various resistor combinations within the same SOT-563 package to accommodate different logic levels and drive requirements.
Direct pin-compatible substitutes may exist within the same family, such as the NSBC143EDXV6T1, though resistor values differ. Verify electrical parameters and physical dimensions before substitution. Consult the manufacturer's replacement guide for approved alternatives.