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The NSBC143ZDXV6T1G is a dual NPN digital transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It integrates two NPN bipolar junction transistors with internal biasing resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 4.7 kOhms and a minimum DC current gain (hfe) of 80. It operates within a temperature range of -55°C to +150°C and has a unit weight of 3 mg.
Verify the specific ordering suffix T1G to confirm tape-and-reel packaging quantities and RoHS compliance status. Confirm availability through authorized distributors as supply chain conditions may vary. Ensure the part number matches the exact pinout configuration required for the target PCB footprint to prevent installation errors during assembly.
Select this component when a dual NPN configuration with integrated base resistors is required. The 4.7 kOhm input resistance suits standard logic levels. Compare against single-transistor alternatives if only one channel is needed. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements of the specific application circuit.
This part belongs to the NSBC143ZDXV6 series of pre-biased digital transistors from onsemi. It serves as a complementary or alternative solution to other dual transistor arrays in the same family, such as PNP variants or different resistor ratio configurations. The SOT-563 package is widely used in modern compact electronic designs requiring multiple discrete functions in a small form factor.
NSBA143ZDXV6T1G offers a complementary PNP configuration. NSBC124XPDXV6T1G provides a dual NPN option with different resistor values. Verify pin compatibility and electrical parameters before substituting any alternative part numbers.