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The NSBC143ZPDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates one NPN and one PNP silicon transistor with monolithic bias resistor networks. The device features a series base resistor (R1) of 4.7 kΩ and a base-emitter resistor (R2) of 47 kΩ. Maximum ratings include a collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc for both transistors. Thermal characteristics specify a total device dissipation of 357 mW at 25°C when one junction is heated, and 500 mW when both are heated.
Verify the specific ordering suffix against official documentation to confirm package pitch and shipping configuration. Confirm RoHS compliance status as manufacturing processes evolve. Ensure the selected variant matches the required resistor values and polarity configuration for the intended application before procurement.
Select this component when a complementary pair of pre-biased transistors is required in a minimal footprint. Verify that the integrated resistor ratio of approximately 0.1 meets the input impedance requirements. Ensure the 50 V breakdown voltage and 100 mA current limits align with the circuit's operational parameters.
This part belongs to the NSBC114EPDXV6T1 series of dual BRTs manufactured by onsemi. The series offers various resistor combinations within the same SOT-563 package to accommodate different logic drive requirements. The NSBC143ZPDXV6T1 specifically provides a 4.7 kΩ series resistor and a 47 kΩ base-emitter resistor for each transistor channel.
Direct substitutes within the same series include NSBC143EPDXV6T1G and NSBC143TPDXV6T1G. These alternatives share the SOT-563 package but feature different internal resistor configurations. Verify pinout compatibility and electrical characteristics before substitution.